Products
Academic And Industrial R&D Professional Inspection System

Academic And Industrial R&D Professional Inspection System

JadeSiC-NK

Non-Destructive Inspection System for SiC Crystal Killer-Defects Detection

The Best Substitution for KOH Etching Method ▪ Industry first technology for non-destructive defect inspection for SiC substrates ▪ Direct insight to SiC substrates wafer mapping for killer defects distribution ▪ Effective monitor the quality of SiC substrates ▪ Significant costs reduction comparing to KOH etching by avoid etching SiC substrates

Features

  • Detect and identify defects on the surface and inside of SiC substrates with advanced NLO (non-linear optics) technology
  • Non-destructive inspection to replace costly KOH etching method
  • Whole SiC wafer defect scanning ability provides more accurate defect density distribution over the sampling interpolation of KOH etching method.
  • Focus on killer defects (BPD, TED, TSD, Micropipe, Stacking Fault) detection for SiC substrates
  • Support 2”, 4”, 6”, 8” SiC substrates inspection
  • Optional function of MicroArea 3D scan available

Specifications

#FIRST NAMELAST NAMEUSER NAMEDATE
Available samplesSiC substrate / SiC Epi
Available wafer size2", 4", 6", 8"
Inspection itemWhole wafer defect scan (micropipe, BPD, stacking fault)
Whole wafer defect scan speed1 hr @4” wafer
2 hrs @6” wafer
4 hrs @8” wafer
Whole wafer defect scan lateral resolution1 μm
Micro area defect FOV400 μm
Micro area defect scan resolutionUp to 1024 x 1024
Micro area defect scan lateral resolution0.4 μm
Micro area defect scan axial resolution0.25 μm

Contacts

+886-2-2697-5562
+886-2-2697-3927
info@southport.com.tw
18F-1, No. 95, Sec. 1, Xintai 5th Rd., Xizhi Dist., New Taipei City,Taiwan
南方科技股份有限公司 Southport Corporation
Copyright © 2014-2025+ All Rights Reserved.
Features
Specification
Expansion Modules